local_shipping Free delivery for orders over €10 place Free 2 Hour Click & Collect Service Available

Fundamentals of modern VLSI devices

by Yuan Taur | 02 May 2013
Category: Science Academic
Synopsis
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
€65.79
197 Reward Points
In stock online
Delivery 5-7 Days
Eligible for free delivery

Any purchases for more than €10 are eligible for free delivery anywhere in the UK or Ireland!

Synopsis
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Quantity
Quantity
€65.79
197 Reward Points
In stock online
Delivery 5-7 Days
Eligible for free delivery

Any purchases for more than €10 are eligible for free delivery anywhere in the UK or Ireland!

Quantity
Quantity

Product Details

ISBN - 9781107635715
Format -
Publisher -
Published - 02/05/2013
Categories - All, Books, Education, Engineering And Construction Academic, All, Books, Education, Science Academic
No. of Pages - 680
Weight - 1320
Edition - Second edition
Series - - Not Available
Page Size - 25
Language - en-US
Readership Age - Not Available
Table of Contents - Not Available

Delivery And Returns

Please Note: Items in our extended range may take longer to deliver. Delivery in 5-7 Days

Place an order for over €10 to receive free delivery to anywhere in Ireland and the UK! See our Delivery Charges section below for a full breakdown of shipping costs for all destinations.

Delivery Charges

  Ireland & UK* Europe & USA Australia & Canada Rest of World
Under €10 €3.80 €10 €15 €25
Over €10
Free €10 €15 €25

*Free delivery on all orders over €10 - only applies to order total.

All orders will be delivered by An Post.